US 12,363,918 B2
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory
Laurent Grenouillet, Grenoble (FR); Jean Coignus, Grenoble (FR); and Elisa Vianello, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Nov. 2, 2022, as Appl. No. 17/979,183.
Claims priority of application No. 2111616 (FR), filed on Nov. 2, 2021.
Prior Publication US 2023/0133523 A1, May 4, 2023
Int. Cl. H10B 80/00 (2023.01); H10B 99/00 (2023.01)
CPC H10B 99/00 (2023.02) 11 Claims
OG exemplary drawing
 
1. A method for co-manufacturing a ferroelectric memory comprising a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode and an OxRAM resistive memory comprising a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode, the co-manufacturing method comprising:
a step of depositing a layer of first electrode carried out identically for a so zone for forming the OxRAM resistive memory and a zone for forming the ferroelectric memory;
a step of depositing a layer of hafnium dioxide-based active material carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory;
a step of depositing a first conductive layer carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory;
a step of making a mask at the zone of the first conductive layer for forming the ferroelectric memory, leaving the zone of the first conductive layer for forming the OxRAM resistive memory free;
a step of removing the first conductive layer at the zone of the first conductive layer for forming the OxRAM resistive memory, the zone of the first conductive layer for forming the ferroelectric memory being protected by the mask;
a step of removing the mask at the zone of the first conductive layer for forming the ferroelectric memory;
a step of depositing a second conductive layer, said second conductive layer being in contact with the first conductive layer at the zone of the first conductive layer for forming the ferroelectric memory and in contact with the layer of active material at the zone of the first conductive layer for forming the OxRAM, the material of the second conductive layer being selected to create oxygen vacancies in the layer of active material of the OxRAM when the second conductive layer is in contact with the layer of active material of the OxRAM;
a step of depositing a third conductive layer carried out identically for the zone for forming the OxRAM and the zone for forming the ferroelectric memory, said third conductive layer being in contact with the second conductive layer.
 
7. A device including an OxRAM resistive memory arranged in a first dedicated zone and a ferroelectric memory arranged in a second dedicated zone,
the ferroelectric memory including a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode,
the OxRAM resistive memory including a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode,
bottom electrodes of the OxRAM ferroelectric and resistive memories being formed by a same layer of first electrode present on the first and second dedicated zones,
the respective layer of hafnium dioxide-based active materials of the OxRAM ferroelectric and resistive memories being formed by a same layer of hafnium dioxide-based active material present on the first and second dedicated zones,
the second electrode of the ferroelectric memory being formed by a tri-layer including, in the second dedicated zone, a first conductive layer in contact with the layer of active material, a second conductive layer on the first conductive layer and a third conductive layer on the second conductive layer,
the second electrode of the resistive OxRAM being formed by a bi-layer including the second conductive layer in contact with the layer of active material and the third conductive layer on the first conductive layer, in the first dedicated zone,
the material of the second conductive layer being selected to create oxygen vacancies in the layer of active material of the OxRAM resistive memory when the second conductive layer is in contact with the layer of active material of the OxRAM resistive memory.