US 12,363,916 B2
Memory devices including strings of memory cells and related systems
David A. Daycock, Boise, ID (US); and Jonghun Kim, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 4, 2023, as Appl. No. 18/365,850.
Application 18/365,850 is a division of application No. 17/171,622, filed on Feb. 9, 2021, granted, now 11,744,086.
Prior Publication US 2023/0380193 A1, Nov. 23, 2023
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10B 63/84 (2023.02) [H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/8265 (2023.02); H10N 70/881 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each tier individually comprising a conductive structure and an insulative structure;
a barrier material separating opposing portions of a conductive material of the conductive structures;
strings of memory cells vertically extending through the stack structure, the strings of memory cells comprising a channel material vertically extending through the stack structure; and
conductive rails laterally adjacent to the conductive structures of the stack structure, individual conductive rails in horizontal alignment with the barrier material and the conductive material of a respective conductive structure.