US 12,363,908 B2
Semiconductor memory devices with varying channel width and methods of manufacturing thereof
Peng-Chun Liou, Hsinchu (TW); Zhiqiang Wu, Chubei (TW); Ya-Yun Cheng, Taichung (TW); Yi-Ching Liu, Hsinchu (TW); and Meng-Han Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,270.
Application 18/361,270 is a continuation of application No. 17/458,692, filed on Aug. 27, 2021, granted, now 11,758,734.
Claims priority of provisional application 63/156,755, filed on Mar. 4, 2021.
Prior Publication US 2024/0023338 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01)
CPC H10B 51/20 (2023.02) [H10B 51/10 (2023.02); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor channel extending along a vertical direction and a first lateral direction;
a first conductive structure extending along the vertical direction and in contact with one end of the first semiconductor channel along the first lateral direction; and
a second conductive structure extending along the vertical direction and in contact with the other end of the first semiconductor channel along the first lateral direction;
wherein the first semiconductor channel has a first width along a second lateral direction perpendicular to the first lateral direction, and the first width varies in accordance with an increasing height of the first semiconductor channel.