US 12,362,299 B2
Basin-shaped underbump plates and methods of forming the same
Yen-Hao Chen, Taichung (TW); Han-Hsiang Huang, Hsinchu (TW); Yu-Sheng Lin, Zhubei (TW); Chien-Sheng Chen, Hsinchu (TW); and Shin-Puu Jeng, Po-Shan Village (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Apr. 28, 2022, as Appl. No. 17/731,473.
Prior Publication US 2023/0352428 A1, Nov. 2, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/05 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0652 (2013.01); H01L 23/49833 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05013 (2013.01); H01L 2224/05014 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06133 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a semiconductor die comprising an array of first bonding structures, wherein at least one of the first bonding structures comprises a first metal pad located within a first dielectric material layer and a basin-shaped underbump metallization (UBM) pad located within a respective opening in a passivation dielectric layer that overlies the first dielectric material layer and contacting the first metal pad, wherein the passivation dielectric layer has a same dielectric material composition throughout and comprises a passivation dielectric material selected from silicon nitride and photosensitive polyimide and contacting a peripheral top surface segment of the first metal pad, and wherein the basin-shaped UBM pad comprises a bottommost surface contacting a center top surface segment of the first metal pad, a first tapered annular surface contacting a first tapered surface segment of the passivation dielectric material and adjoined to a periphery of the bottommost surface, a first horizontal annular surface contacting a first horizontal annular surface segment of the passivation dielectric material and adjoined to a top periphery of the first tapered annular surface, a second tapered annular surface contacting a second tapered surface segment of the passivation dielectric material and adjoined to an outer periphery of the first horizontal annular surface, and a second horizontal annular surface contacting a second horizontal annular surface segment of the passivation dielectric material;
an interposer comprising an array of second bonding structures, wherein a corresponding one of the second bonding structures comprises an UBM pillar having a respective cylindrical shape; and
an array of solder material portions bonded to a respective one of the first bonding structures and to a respective one of the second bonding structures.