| CPC H01L 23/5385 (2013.01) [H01L 21/3043 (2013.01); H01L 21/4846 (2013.01); H01L 24/20 (2013.01)] | 20 Claims |
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1. An interposer comprising:
a first substrate comprising a glass;
a first insulator structure and first interconnect structures therein;
a second substrate comprising a semiconductor material;
a device layer between the second substrate and the first insulator structure;
through-substrate interconnect (TSI) structures which extend through the second substrate; and
a second insulator structure and second interconnect structures therein, wherein respective inorganic dielectrics of the first insulator structure and the second insulator structure adjoin each other at a material interface;
wherein first contacts, to couple the interposer to a first integrated circuit (IC) chip, are in an arrangement which spans the material interface at a first side of the interposer;
wherein second contacts, to couple the interposer to a second IC chip, comprise one or more contacts at a first surface of the first insulator structure;
wherein one or more of third contacts, at a second side of the interposer opposite the first side, are each electrically coupled, via a respective one of the second interconnect structures, to a respective contact of the first contacts and the second contacts;
wherein others of the third contacts are electrically coupled to the device layer via one of the first interconnect structures or the TSI structures; and
wherein one or more of the first contacts and one or more of the second contacts are each electrically coupled to the device layer via the other of the first interconnect structures or the TSI structures.
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