US 12,362,283 B2
Semiconductor device and method of manufacturing the same
Ming-Hung Tseng, Miaoli County (TW); Cheng-Chieh Hsieh, Tainan (TW); and Hao-Yi Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/855,723.
Application 17/855,723 is a continuation of application No. 16/833,684, filed on Mar. 30, 2020, granted, now 11,410,932.
Prior Publication US 2022/0352078 A1, Nov. 3, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 23/3107 (2013.01); H01L 23/5386 (2013.01); H01L 24/94 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a stacked structure, comprising:
a first semiconductor component, comprising a first capacitor and having a first area; and
a second semiconductor component, stacked on the first semiconductor component, comprising a second capacitor, and having a second area smaller than the first area;
first conductive terminals, located on the stacked structure, electrically coupled to the first semiconductor component and aside of the second semiconductor component;
second conductive terminals, located on the stacked structure and electrically coupled to the second semiconductor component; and
a dielectric layer, laterally in contact with the first conductive terminals and the second conductive terminals, and covering the second semiconductor component and a portion of the first semiconductor component exposed by the second semiconductor component, wherein the dielectric layer comprises a single layer structure, and portions of the first conductive terminals and portions of the second conductive terminals extending away from the first semiconductor component are extended out of a surface of the dielectric layer.