| CPC H01L 23/3675 (2013.01) [H01L 21/4817 (2013.01); H01L 23/49833 (2013.01); H01L 25/0655 (2013.01); H01L 23/42 (2013.01); H01L 23/433 (2013.01); H01L 23/49816 (2013.01); H01L 24/73 (2013.01); H01L 2924/1611 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/35121 (2013.01)] | 20 Claims |

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1. A method of forming a semiconductor package structure, comprising:
disposing a first semiconductor device on an interposer substrate;
disposing the interposer substrate on a carrier substrate, wherein the interposer substrate is disposed between the carrier substrate and the first semiconductor device;
applying a thermal interface material on the first semiconductor device; and
attaching a lid on the carrier substrate to cover the first semiconductor device, wherein the lid includes a lower surface having a first recess facing the first semiconductor device and a second recess in the first recess, and a portion of the thermal interface material is accommodated in the first recess and the second recess, wherein the second recess is surrounded by the first recess in a top view, and the first semiconductor device overlaps the first recess and the second recess.
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