US 12,362,252 B2
Method for manufacturing composite layer circuit structure of electronic device
Yu-Jen Chang, Miao-Li County (TW); Ching-Wei Chen, Miao-Li County (TW); Tzu-Yen Chiu, Miao-Li County (TW); Hung-I Tseng, Miao-Li County (TW); and Chun-Chin Fan, Miao-Li County (TW)
Assigned to Innolux Corporation, Miaoli County (TW)
Filed by Innolux Corporation, Miao-Li County (TW)
Filed on May 23, 2022, as Appl. No. 17/751,653.
Claims priority of application No. 202111476716.5 (CN), filed on Dec. 2, 2021.
Prior Publication US 2023/0178447 A1, Jun. 8, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/3192 (2013.01) [H01L 21/02271 (2013.01); H01L 21/76873 (2013.01); H01L 2924/14 (2013.01); H01L 2924/181 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for manufacturing a composite layer circuit structure of an electronic device, the method comprising:
forming a first conductive layer on a carrier plate;
forming a first photoresist layer on the first conductive layer, wherein the first photoresist layer comprises a plurality of first openings exposing part of the first conductive layer;
forming a first electroplating layer in the plurality of first openings;
removing the first photoresist layer; and
forming a first insulating layer on the first conductive layer, wherein the first insulating layer comprises a plurality of second openings exposing part of the first electroplating layer,
wherein at least one heat treatment process is performed on the first electroplating layer before the first insulating layer is formed on the first conductive layer,
wherein, a temperature when performing the at least one heat treatment process is higher than or equal to 40° C. and lower than or equal to 300° C., and a time when performing the at least one heat treatment process is less than or equal to 3 hours,
wherein a step of performing the at least one heat treatment process on the first electroplating layer comprises: performing a first heat treatment process on the first electroplating layer before removing the first photoresist layer, wherein a temperature when performing the first heat treatment process is higher than or equal to 40° C. and lower than or equal to 80° C., and a time when performing the first heat treatment process is less than or equal to 3 hours.