US 12,362,243 B2
Semiconductor device assemblies including TSVs of different lengths and methods of making the same
Kunal R. Parekh, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 12, 2022, as Appl. No. 17/719,158.
Claims priority of provisional application 63/274,419, filed on Nov. 1, 2021.
Prior Publication US 2023/0139278 A1, May 4, 2023
Int. Cl. H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01)
CPC H01L 22/32 (2013.01) [H01L 21/76898 (2013.01); H01L 23/31 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device assembly comprising:
a first semiconductor device having a front surface and a rear surface, a plurality of front-side pads disposed over the front surface at a first distance from the rear surface, and a plurality of additional device pads disposed over the front surface at a second distance from the rear surface greater than the first distance;
at least one second semiconductor device in physical and electrical contact with a top side of each of the plurality of additional device pads; and
an encapsulant material at least partially surrounding the at least one second semiconductor device and covering a top side of each of the plurality of front-side pads;
a first plurality of TSVs, each extending from the rear surface through the first semiconductor device to a bottom side of a corresponding one of the plurality of front-side pads; and
a second plurality of TSVs, each extending from the rear surface through the first semiconductor device to a bottom side of a corresponding one of the plurality of additional device pads.