US 12,362,226 B2
Method for forming a handling substrate for a composite structure intended for RF applications and handling substrate
Young-Pil Kim, Grenoble (FR); Daniel Delprat, Crolles (FR); Luciana Capello, Grenoble (FR); Isabelle Bertrand, Bernin (FR); and Frédéric Allibert, Grenoble (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 17/756,244
Filed by Soitec, Bernin (FR)
PCT Filed Nov. 25, 2020, PCT No. PCT/FR2020/052171
§ 371(c)(1), (2) Date May 19, 2022,
PCT Pub. No. WO2021/111062, PCT Pub. Date Jun. 10, 2021.
Claims priority of application No. 1913780 (FR), filed on Dec. 5, 2019.
Prior Publication US 2023/0005787 A1, Jan. 5, 2023
Int. Cl. H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/66 (2006.01); H10D 86/00 (2025.01)
CPC H01L 21/76254 (2013.01) [H01L 21/02027 (2013.01); H01L 23/66 (2013.01); H10D 86/201 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A handle substrate for a composite structure, comprising:
a base substrate including an epitaxial layer of silicon on a monocrystalline silicon wafer obtained by Czochralski pulling, the monocrystalline silicon wafer exhibiting a resistivity of between 10 and 500 ohm.cm, the epitaxial layer of silicon exhibiting a resistivity of greater than 2,000 ohm.cm and a thickness ranging from 2 to 100 microns;
a passivation layer on and in contact with the epitaxial layer of silicon, the passivation layer being amorphous or polycrystalline; and
a charge-trapping layer on and in contact with the passivation layer;
wherein:
the passivation layer is a layer of silicon carbide formed by carbonization of the surface of the epitaxial layer of silicon, or
the passivation layer is a layer of silicon nitride formed by nitridation of a surface of the epitaxial layer of silicon.