US 12,362,221 B2
Method for manufacturing electronic device
Toru Miura, Nagoya (JP); and Hiroyoshi Kurihara, Nagoya (JP)
Assigned to MITSUI CHEMICALS ICT MATERIA, INC., Tokyo (JP)
Appl. No. 17/906,638
Filed by RM TOHCELLO CO., LTD., Tokyo (JP)
PCT Filed Mar. 5, 2021, PCT No. PCT/JP2021/008786
§ 371(c)(1), (2) Date Sep. 19, 2022,
PCT Pub. No. WO2021/199919, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 2020-061027 (JP), filed on Mar. 30, 2020.
Prior Publication US 2023/0163014 A1, May 25, 2023
Int. Cl. H01L 21/683 (2006.01); C09J 7/24 (2018.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01)
CPC H01L 21/6836 (2013.01) [C09J 7/245 (2018.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/7806 (2013.01); C09J 2203/326 (2013.01); H01L 2221/68327 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing an electronic device, the method comprising at least:
a preparing step of preparing a structure provided with an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer and used for temporarily fixing an electronic component, an adhesive resin layer (B) provided on a second surface side of the base material layer, and an unevenness-absorbing resin layer (C) provided between the base material layer and the adhesive resin layer (A) or between the base material layer and the adhesive resin layer (B), and which is able to be cross-linked by an external stimulus, and an electronic component attached to the adhesive resin layer (A) of the adhesive film and having an uneven structure;
a cross-linking step of cross-linking the unevenness-absorbing resin layer (C) by applying an external stimulus to the unevenness-absorbing resin layer (C) in the structure; and
a sealing step of sealing the electronic component with a sealing material,
wherein a storage elastic modulus E′ of an unevenness-absorbing resin layer (C′) obtained by cross-linking the unevenness-absorbing resin layer (C) at 125° C. is 1.0×106 Pa or higher and 1.0×109 Pa or lower.