US 12,362,216 B2
Plasma processing apparatus and semiconductor fabrication method using the same
Daehyun Lee, Suwon-si (KR); Youngil Kang, Hwaseong-si (KR); Youngeun Kim, Seoul (KR); Jaesuk Kim, Hwaseong-si (KR); Minji Park, Seoul (KR); Sangwook Park, Seongnam-si (KR); Dongho Shin, Suwon-si (KR); Dongyun Yeo, Seoul (KR); Chunghun Lee, Hwaseong-si (KR); and Kyoung-Mi Choi, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 2, 2021, as Appl. No. 17/165,594.
Claims priority of application No. 10-2020-0084981 (KR), filed on Jul. 9, 2020.
Prior Publication US 2022/0013397 A1, Jan. 13, 2022
Int. Cl. H01L 21/683 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/6833 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32577 (2013.01); H01J 37/32724 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a plasma electrode;
an electrostatic chuck on the plasma electrode;
a distribution member below the plasma electrode and having a board receiving hole;
a control board in the board receiving hole of the distribution member;
a diode board on the control board and in the board receiving hole of the distribution member;
a plurality of heater power transfer members penetrating the distribution member; and
spring connectors connected between the control board and the diode board and between the control board and the plurality of heater power transfer members,
wherein the diode board is configured to prevent a heater power transfer to the control board,
wherein the plurality of heater power transfer members are symmetrically arranged with each other about a center of the distribution member,
wherein the spring connectors contact surfaces of the control board, surfaces of the diode board and the plurality of heater power transfer members, thereby electrically connecting them to each other,
wherein the distribution member circularly contacts an edge of the plasma electrode and transmits a radio-frequency power to the plasma electrode,
wherein the electrostatic chuck includes:
a microheater layer to heat a wafer; and
a chuck electrode on the microheater layer,
wherein the microheater layer includes:
an inner heater part on an inside of the microheater layer; and
an outer heater part outside the inner heater part,
wherein the inner heater part includes:
a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer; and
a second inner heater in a second inner region that is outside and circumferentially surrounds the first inner region,
wherein the outer heater part includes:
a first outer heater in a first outer region that is outside and circumferentially surrounds the second inner region; and
a second outer heater in a second outer region that is outside and circumferentially surrounds the first outer region, and
wherein a distance in a diameter direction between a center of the first outer heater and a center of the second outer heater is less than a distance in the diameter direction between a center of the first inner heater and a center of the second inner heater.