US 12,362,191 B2
Methods and devices related to radio frequency devices
Hans Taddiken, Munich (DE); Christian Butschkow, Munich (DE); Andrea Cattaneo, Taufkirchen (DE); Henning Feick, Dresden (DE); Dominik Heiss, Munich (DE); Christoph Kadow, Gauting (DE); Uwe Seidel, Munich (DE); Valentyn Solomko, Munich (DE); and Anton Steltenpohl, Munich (DE)
Assigned to Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed by Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed on Jan. 9, 2024, as Appl. No. 18/407,877.
Application 18/407,877 is a continuation of application No. 17/645,640, filed on Dec. 22, 2021, granted, now 11,948,802.
Application 17/645,640 is a continuation of application No. 16/903,588, filed on Jun. 17, 2020, granted, now 11,217,453, issued on Dec. 15, 2021.
Claims priority of application No. 19190666 (EP), filed on Aug. 8, 2019.
Prior Publication US 2024/0145253 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 84/00 (2025.01); H10D 86/00 (2025.01)
CPC H01L 21/30655 (2013.01) [H01L 21/02016 (2013.01); H01L 21/26506 (2013.01); H01L 21/3226 (2013.01); H01L 21/76 (2013.01); H01L 21/76264 (2013.01); H01L 23/3171 (2013.01); H01L 23/58 (2013.01); H10D 12/035 (2025.01); H10D 62/124 (2025.01); H10D 84/00 (2025.01); H10D 86/201 (2025.01); H01L 23/291 (2013.01); H10D 62/104 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a device, the method comprising:
providing a semiconductor substrate having a first side and a second side opposite the first side, wherein a thickness of the semiconductor substrate is 70 μm or less;
forming at least two radio frequency devices at the first side of the semiconductor substrate,
forming a processed region at the second side of the semiconductor substrate, wherein the processed region is configured to provide additional ion gettering at the second side of the semiconductor substrate and wherein the processed region comprises one or more of:
a defect rich layer,
a doped layer with a dopant concentration higher than in a region adjacent to the doped layer,
an aluminum oxide layer; or
a reactive ion etched region; and
forming an etched region from the second side of the semiconductor substrate limited to an area between the at least two radio frequency devices.