US 12,362,184 B2
Semiconductor devices and methods of manufacturing thereof
Ching-Hung Kao, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 21, 2024, as Appl. No. 18/670,140.
Application 18/670,140 is a division of application No. 17/584,814, filed on Jan. 26, 2022, granted, now 12,020,940.
Claims priority of provisional application 63/222,258, filed on Jul. 15, 2021.
Prior Publication US 2024/0312785 A1, Sep. 19, 2024
Int. Cl. H01L 21/762 (2006.01); H01L 21/28 (2006.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01)
CPC H01L 21/28158 (2013.01) [H01L 21/76202 (2013.01); H10D 62/115 (2025.01); H10D 64/511 (2025.01); H10D 84/83 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a recess along a top surface of a semiconductor substrate, the recess having a first sidewall and a second sidewall laterally opposite each other;
a nitride-based spacer layer extending along the first sidewall of the recess, wherein the second sidewall is defined by a shallow trench isolation (STI) structure extending into the semiconductor substrate; and
a field oxide layer in the recess extending along a bottom surface of the recess, wherein a lateral tip of the field oxide layer is blocked by the nitride-based spacer layer from laterally extending beyond the first sidewall into the semiconductor substrate.