US 12,362,175 B2
Method for manufacturing SiC substrate
Tadaaki Kaneko, Sanda (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/761,086
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Sep. 24, 2020, PCT No. PCT/JP2020/036002
§ 371(c)(1), (2) Date Mar. 16, 2022,
PCT Pub. No. WO2021/060367, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 2019-176574 (JP), filed on Sep. 27, 2019.
Prior Publication US 2022/0344152 A1, Oct. 27, 2022
Int. Cl. H01L 21/02 (2006.01); C30B 33/02 (2006.01); C30B 33/12 (2006.01); H01L 21/306 (2006.01); H10D 62/832 (2025.01)
CPC H01L 21/0262 (2013.01) [C30B 33/02 (2013.01); C30B 33/12 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/30625 (2013.01); H10D 62/8325 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A method for producing a SiC substrate, comprising a strained layer thinning step of moving a strained layer of a SiC substrate body to a (0001) surface side to be thermally etched to thin the strained layer by thermal etching of the (0001) surface of the SiC substrate body and a strained layer removal step of removing the strained layer,
wherein the strained layer thinning step is a step of placing the SiC substrate body in a main container entirely made of a SiC material in order to make the (0001) surface of the SiC substrate body and the SiC material face each other, and performing a heat treatment so as to form a temperature gradient that the (0001) surface of the SiC substrate body is at a high temperature side and the SiC material is at a low temperature side.