US 12,362,154 B2
Ion beam etching chamber with etching by-product redistributor
Te-Hsien Hsieh, Kaohsiung (TW); and Lee-Chuan Tseng, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jan. 27, 2022, as Appl. No. 17/586,484.
Application 17/586,484 is a division of application No. 15/991,029, filed on May 29, 2018, granted, now 11,239,060.
Prior Publication US 2022/0148856 A1, May 12, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 14/02 (2006.01); C23C 14/46 (2006.01); C23C 14/56 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); C23C 16/44 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32633 (2013.01) [C23C 14/022 (2013.01); C23C 14/46 (2013.01); C23C 14/5873 (2013.01); C23C 16/0245 (2013.01); H01J 37/32422 (2013.01); H01J 37/32431 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32871 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/68785 (2013.01); C23C 14/564 (2013.01); C23C 16/4412 (2013.01); H01J 2237/022 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An etching apparatus, comprising:
a substrate holder disposed within a processing chamber and comprising a workpiece reception surface that is configured to hold a workpiece and that faces a lower surface of the processing chamber, wherein the lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a by-product from an etching process;
a baffle extending outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber, wherein the baffle is separated from the lower surface of the processing chamber and wherein the workpiece reception surface faces the baffle;
a plasma source configured to form an ion beam, wherein the ion beam extends along a line from the plasma source, to directly over the baffle, and to intersect the workpiece reception surface directly above the first region;
a vacuum inlet arranged along an interior surface of the processing chamber that is above the baffle, wherein the vacuum inlet is coupled to a vacuum pump; and
a by-product redistributor configured to move the by-product from the first region of the lower surface to a second region of the lower surface directly below the baffle, wherein the by-product redistributor comprises an additional vacuum inlet disposed below the baffle.