| CPC H01J 37/32201 (2013.01) [H01J 37/32229 (2013.01); H01J 37/3244 (2013.01)] | 16 Claims |

|
1. An apparatus for treating a substrate comprising:
a process chamber having a treating space therein;
a support unit configured to support the substrate in the treating space;
a gas supply unit configured to supply treating gas to the treating space; and
a microwave application unit configured to apply microwaves to the treating gas to generate plasma,
wherein the microwave application unit includes
a transmission plate disposed above the support unit and configured to radiate the microwaves to the treating space;
a first waveguide disposed above the transmission plate; and
a first power supply configured to apply the microwaves to the first waveguide,
wherein the first waveguide is provided in a discontinous ring shape partially surrounding a center of the transmission plate,
wherein the first waveguide is connected to the first power supply at a position spaced apart from the center of the transmission plate, when viewed from the top,
wherein the first waveguide is positioned to face an edge region of the transmission plate, and has a cut portion,
wherein the first power supply is coupled to one surface of the first waveguide adjacent to the cut surface of the first waveguide,
wherein a plurality of first slots are formed on a lower surface of the first waveguide, and
the first slots are spaced apart from each other along a circumferential direction of the first waveguide.
|