| CPC H01J 37/28 (2013.01) [H01J 37/1471 (2013.01); H01J 37/244 (2013.01); H01J 37/265 (2013.01); H01J 2237/0048 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2817 (2013.01)] | 20 Claims |

|
1. A semiconductor inspection apparatus, comprising:
a stage configured to support a semiconductor device;
a first column configured to irradiate a first electron beam toward an electrode in a first inspection region of the semiconductor device on the stage;
a second column configured to irradiate a second electron beam toward the first inspection region of the semiconductor device;
a detector configured to detect first secondary electrons and second secondary electrons generated by the second electron beam; and
a display configured to display a contrast image based on the first and second secondary electrons,
where the contrast image includes a first section based on the first secondary electrons and a second section based on the second secondary electrons,
wherein the contrast image reflects a presence or an absence of an electrical defect in the semiconductor device,
wherein the first column is disposed to cause the first electron beam to form a first angle with a top surface of the semiconductor device,
wherein the second column is disposed to cause the second electron beam to form a second angle with the top surface of the semiconductor device, and
wherein the first angle and the second angle are different from each other.
|