US 12,362,024 B2
Memory device performing program operation and method of operating the same
Dong Hun Kwak, Icheon-si (KR)
Assigned to SK hynix Inc., Incheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jul. 27, 2023, as Appl. No. 18/360,593.
Claims priority of application No. 10-2023-0019552 (KR), filed on Feb. 14, 2023.
Prior Publication US 2024/0274210 A1, Aug. 15, 2024
Int. Cl. G11C 8/08 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of operating a memory device, the method comprising:
performing a first program operation on first memory cells connected to a first channel region among a plurality of channel regions formed by separating one channel hole into the plurality of channel regions, based on a first verify voltage;
performing a second program operation on second memory cells connected to a second channel region among the plurality of channel regions, based on a second verify voltage;
determining third memory cells having a threshold voltage lower than a target threshold voltage distribution among the first memory cells while performing the second program operation; and
performing a third program operation on the third memory cells.