US 12,361,192 B2
Memory device, integrated circuit device and method
Meng-Sheng Chang, Hsinchu (TW); Chia-En Huang, Hsinchu (TW); and Chien-Ying Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 7, 2022, as Appl. No. 18/053,030.
Application 18/053,030 is a continuation of application No. 17/103,159, filed on Nov. 24, 2020, granted, now 11,501,051.
Claims priority of provisional application 63/034,673, filed on Jun. 4, 2020.
Prior Publication US 2023/0089590 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/392 (2020.01); G03F 1/70 (2012.01); G06F 30/398 (2020.01)
CPC G06F 30/392 (2020.01) [G03F 1/70 (2013.01); G06F 30/398 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
at least one bit line;
at least one word line;
at least one memory cell comprising a capacitor and a transistor; and
a controller coupled to the at least one memory cell via the at least one bit line and the at least one word line,
wherein
the transistor has
a gate terminal coupled to the word line,
a first terminal, and
a second terminal,
the capacitor has
a first end coupled to the first terminal of the transistor,
a second end coupled to the bit line, and
an insulating material between the first end and the second end, and configured to break down under a predetermined break-down voltage or higher applied between the first end and the second end,
the controller is configured to, in a programming operation,
apply a turn-ON voltage via the at least one word line to the gate terminal of the transistor to turn ON the transistor, and
apply a program voltage via the at least one bit line to the second end of the capacitor to apply, while the transistor is turned ON, the predetermined break-down voltage or higher between the first end and the second end of the capacitor to break down the insulating material of the capacitor to write into the at least one memory cell a first logic value corresponding to the insulating material that has been broken down.