US 12,360,084 B2
High-sensitivity magnetoresistive acoustic wave sensor and array device
Bin Qi, Zhangjiagang (CN); and Songsheng Xue, Zhangjiagang (CN)
Assigned to MultiDimension Technology Co., Ltd., Zhangjiagang (CN)
Appl. No. 17/753,358
Filed by MultiDimension Technology Co., Ltd., Zhangjiagang (CN)
PCT Filed Aug. 18, 2020, PCT No. PCT/CN2020/109764
§ 371(c)(1), (2) Date Aug. 30, 2022,
PCT Pub. No. WO2021/036861, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 201910803646.6 (CN), filed on Aug. 28, 2019.
Prior Publication US 2022/0397557 A1, Dec. 15, 2022
Int. Cl. G01N 29/24 (2006.01); G01R 33/09 (2006.01)
CPC G01N 29/2412 (2013.01) [G01R 33/09 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A magnetoresistive acoustic wave sensor with high sensitivity, comprising:
a protective tube shell;
a magnetic vibration assembly; and
a magnetoresistive chip located inside the protective tube shell,
wherein
the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly, and a counterweight body or counterweight liquid for adjusting the equivalent density of the magnetoresistive acoustic wave sensor with high sensitivity is provided inside the protective tube shell;
the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located; and
alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located.