US 12,359,911 B2
Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS
Eunkyu Lee, Yongin-si (KR); Yeonchoo Cho, Seongnam-si (KR); Sangwon Kim, Seoul (KR); Kyung-Eun Byun, Seongnam-si (KR); Hyunjae Song, Hwaseong-si (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 15, 2024, as Appl. No. 18/412,823.
Application 18/412,823 is a division of application No. 17/145,966, filed on Jan. 11, 2021, granted, now 11,906,291.
Claims priority of application No. 10-2020-0063274 (KR), filed on May 26, 2020.
Prior Publication US 2024/0151522 A1, May 9, 2024
Int. Cl. G01B 15/02 (2006.01); G01N 23/2208 (2018.01); G01N 23/2273 (2018.01); H01L 21/285 (2006.01); H01L 21/66 (2006.01); H10D 64/62 (2025.01)
CPC G01B 15/02 (2013.01) [G01N 23/2208 (2013.01); G01N 23/2273 (2013.01); H01L 21/28512 (2013.01); H01L 22/12 (2013.01); H10D 64/62 (2025.01); G01N 2223/085 (2013.01); G01N 2223/61 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of measuring a content of silicon carbide included in an interface layer between a silicon substrate and a graphene layer directly grown on the silicon substrate, the method comprising:
emitting X-ray radiation, using an X-ray photoelectron spectroscopy (XPS) instrument, toward the silicon substrate using a source on the XPS instrument;
obtaining a spectrum of a photoelectron beam emitted from the silicon substrate in response to emitting the X-ray radiation toward the silicon substrate using a sensor on the XPS instrument; and
measuring a ratio of the content of silicon carbide relative to the content of the interface layer by using the spectrum of the photoelectron beam emitted from the silicon substrate by using X-ray photoelectron spectroscopy.