US 12,359,341 B2
Bonded substrate composed of support substrate and group-13 element nitride crystal substrate
Shuhei Higashihara, Nagoya (JP); Masashi Goto, Nagoya (JP); and Ayumi Saito, Nagoya (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Feb. 22, 2024, as Appl. No. 18/584,227.
Application 18/584,227 is a continuation of application No. PCT/JP2022/019033, filed on Apr. 27, 2022.
Claims priority of application No. 2021-153852 (JP), filed on Sep. 22, 2021.
Prior Publication US 2024/0191394 A1, Jun. 13, 2024
Int. Cl. B32B 9/04 (2006.01); B32B 9/00 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01)
CPC C30B 25/18 (2013.01) [B32B 9/007 (2013.01); B32B 9/04 (2013.01); C30B 29/403 (2013.01); H01L 21/02389 (2013.01); B32B 2307/538 (2013.01); B32B 2307/7375 (2023.05); B32B 2307/748 (2013.01); H01L 21/0254 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A bonded substrate comprising a support substrate and a group-13 nitride crystal substrate,
wherein said group-13 nitride crystal substrate comprises one or more transition metal elements selected from the group consisting of zinc, iron, manganese, nickel and chromium in a concentration of 1×1017 atoms·cm−3 or higher and 1×1021 atoms·cm−3 or lower,
wherein a bonding surface of said group-13 nitride crystal substrate and a bonding surface of said support substrate are directly bonded with each other, and
said support substrate comprises silicon carbide, aluminum nitride or diamond.