US 12,359,308 B2
Film forming method and semiconductor production apparatus
Yusuke Suzuki, Nirasaki (JP); Tsuyoshi Moriya, Nirasaki (JP); Kazuhide Hasebe, Nirasaki (JP); Atsushi Endo, Nirasaki (JP); and Satoshi Tanaka, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/291,930
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Oct. 30, 2019, PCT No. PCT/JP2019/042540
§ 371(c)(1), (2) Date May 6, 2021,
PCT Pub. No. WO2020/095787, PCT Pub. Date May 14, 2020.
Claims priority of application No. 2018-210065 (JP), filed on Nov. 7, 2018.
Prior Publication US 2022/0010424 A1, Jan. 13, 2022
Int. Cl. C23C 16/42 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/308 (2006.01); H01L 21/66 (2006.01)
CPC C23C 16/042 (2013.01) [C23C 16/45597 (2013.01); H01L 21/3086 (2013.01); H01L 22/12 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A film forming method comprising:
preparing a substrate which has at least one layer formed on a front surface thereof;
measuring a layer thickness of the at least one layer of the substrate, the layer thickness being determined by measuring a height of the at least one layer;
preparing a mask which has a same shape and a same size as those of the substrate;
forming one or more holes at one or more portions of the mask corresponding to one or more desired film formation portions on a back surface of the substrate, based on a measurement result of a surface state of the substrate which includes the layer thickness, the measurement result indicating the height of the layer for each horizontal (x, y) coordinate on the substrate, to create the mask having a pattern formed by the one or more holes, the pattern of the mask corresponding to the substrate whose surface state is measured;
transferring the mask into a process chamber;
transferring the substrate into the process chamber; and
forming a film on the back surface of the substrate with the pattern while the mask is disposed onto the back surface of the substrate.