US 12,359,302 B2
Film deposition apparatus and film deposition method
Manabu Honma, Iwate (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jul. 11, 2023, as Appl. No. 18/350,179.
Claims priority of application No. 2022-130185 (JP), filed on Aug. 17, 2022.
Prior Publication US 2024/0060170 A1, Feb. 22, 2024
Int. Cl. C23C 14/56 (2006.01); C23C 14/24 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); C23C 14/58 (2006.01)
CPC C23C 14/24 (2013.01) [C23C 14/505 (2013.01); C23C 14/54 (2013.01); C23C 14/568 (2013.01); C23C 14/5853 (2013.01); C23C 14/586 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A film deposition apparatus comprising:
a vacuum chamber;
a rotary table provided in the vacuum chamber, and configured to mount a plurality of substrates along a circumferential direction; and
a first processing region, a separation region, and a second processing region provided in this order from an upstream side to a downstream side in a rotation direction of the rotary table,
wherein a first process gas supply and a first exhaust port are provided in the first processing region, the first process gas supply being configured to supply a first process gas to the substrates, and the first exhaust port being configured to exhaust the first process gas supplied to the substrates,
wherein a second process gas supply and a second exhaust port are provided in the second processing region, the second process gas supply being configured to supply a second process gas to the substrates, the second exhaust port being configured to exhaust the second process gas supplied to the substrates,
wherein a separation gas supply and a third exhaust port are provided in the separation region, the separation gas supply being configured to supply a separation gas to separate the first process gas supplied to the first processing region and the second process gas supplied to the second processing region from each other, and the third exhaust port being configured to exhaust the separation gas supplied to the separation region,
wherein the separation gas supply includes a first discharge port and a second discharge port provided such that the third exhaust port is interposed between the first discharge port and the second discharge port in the circumferential direction of the rotary table, and the separation gas is discharged from the first discharge port and the second discharge port,
wherein the first discharge port, the third exhaust port, and the second discharge port are provided in this order from the upstream side to the downstream side in the rotation direction of the rotary table,
wherein an exhaust conductance from the first discharge port to the third exhaust port is less than an exhaust conductance from the first discharge port to a first end of the separation region, the first end being close to the first processing region, and
wherein an exhaust conductance from the second discharge port to the third exhaust port is less than an exhaust conductance from the second discharge port to a second end of the separation region, the second end being close to the second processing region.