US 12,358,213 B2
Step-wise formation of a three-dimensional structure employing different resolutions
Robert Blick, Hamburg (DE); Stefanie Haugg, Hamburg (DE); and Robert Zierold, Hamburg (DE)
Assigned to UNIVERSITÄT HAMBURG, Hamburg (DE)
Appl. No. 17/916,160
Filed by UNIVERSITÄT HAMBURG, Hamburg (DE)
PCT Filed Mar. 30, 2021, PCT No. PCT/EP2021/058276
§ 371(c)(1), (2) Date Sep. 30, 2022,
PCT Pub. No. WO2021/198246, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. LU101722 (LU), filed on Mar. 31, 2020.
Prior Publication US 2023/0191691 A1, Jun. 22, 2023
Int. Cl. B29C 64/135 (2017.01); B29C 64/176 (2017.01); B29C 64/264 (2017.01); B29C 64/393 (2017.01); B33Y 10/00 (2015.01); B33Y 50/02 (2015.01)
CPC B29C 64/135 (2017.08) [B29C 64/176 (2017.08); B29C 64/264 (2017.08); B29C 64/393 (2017.08); B33Y 10/00 (2014.12); B33Y 50/02 (2014.12)] 12 Claims
OG exemplary drawing
 
1. A method of step-wise exposing a voxel of a resist to radiation for forming a three-dimensional structure, the method comprising:
setting a step size to a first resolution;
setting a voxel volume to a first volume;
exposing a first set of voxels of said first volume to radiation using said first resolution;
setting the step size to a second resolution being smaller than said first resolution, or, respectively, greater than said first resolution;
setting the voxel volume to a second volume being smaller than said first volume, or, respectively, greater than said first volume;
exposing a second set of voxels of said second volume to radiation using said second resolution; and
manufacturing of a sensor substrate for a microchannel sensor,
wherein in said sensor substrate one or more channel zones and a support part are formed, wherein one or more channel zones are formed by at least exposing a first set of voxels of said first volume using said first resolution and said support part is formed by at least exposing a second set of voxels of said second volume using said second resolution, said second volume being greater than said first volume.