US 12,035,641 B2
Josephson junction device fabricated by direct write ion implantation
Steven J. Holmes, Ossining, NY (US); Devendra K. Sadana, Pleasantville, NY (US); Oleg Gluschenkov, Tannersville, NY (US); Martin O. Sandberg, Ossining, NY (US); Marinus Johannes Petrus Hopstaken, Carmel, NY (US); and Yasir Sulehria, Niskayuna, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 28, 2021, as Appl. No. 17/564,133.
Prior Publication US 2023/0210019 A1, Jun. 29, 2023
Int. Cl. H10N 60/12 (2023.01); H10N 60/01 (2023.01); H10N 60/80 (2023.01); H10N 60/85 (2023.01)
CPC H10N 60/12 (2023.02) [H10N 60/0912 (2023.02); H10N 60/805 (2023.02); H10N 60/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
first and second electrodes of superconducting metal; and
a nanowire comprising a superconducting region of the substrate that is doped with gallium, the nanowire connecting the first and second electrodes to form a restriction junction of the device,
wherein a length of the nanowire is longer than a width of the nanowire.