US 12,035,638 B2
Magnetoresistance effect element and magnetic memory
Tomoyuki Sasaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Sep. 1, 2021, as Appl. No. 17/463,716.
Claims priority of application No. 2020-148867 (JP), filed on Sep. 4, 2020.
Prior Publication US 2022/0077386 A1, Mar. 10, 2022
Int. Cl. H10N 52/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01)
CPC H10N 52/80 (2023.02) [G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 52/00 (2023.02); G11C 11/165 (2013.01); H10N 50/85 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element comprising:
a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction;
a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and
a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction,
wherein a thickness of the second ferromagnetic layer in the first direction is thinner than a minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction,
a thickness of the magnetic body in the first direction is thicker than a minimum length of the magnetic body in a plane orthogonal to the first direction, and
a direction of easy magnetization axis of the magnetic body and the second ferromagnetic layer is the first direction.