CPC H10K 85/6572 (2023.02) [H10K 10/486 (2023.02); H10K 71/191 (2023.02); H10K 85/10 (2023.02); H10K 85/40 (2023.02); H10K 85/6574 (2023.02); H10K 85/6576 (2023.02)] | 12 Claims |
1. A method comprising:
forming a first photoalignment layer;
illuminating the first photoalignment layer with polarized light to form a first oriented photoalignment layer;
forming a first organic semiconductor layer directly over the first oriented photoalignment layer;
forming a second photoalignment layer over the first organic semiconductor layer;
illuminating the second photoalignment layer with polarized light to form a second oriented photoalignment layer; and
forming a second organic semiconductor layer directly over the second oriented photoalignment layer.
|