US 12,035,547 B2
Image pickup element, stacked image pickup element, and solid-state image pickup apparatus that exel in characteristics of transferring an electric charge accmlarted in photoelectric conversion layer
Yoichiro Iino, Tokyo (JP); Hiroshi Nakano, Tokyo (JP); and Toshiki Moriwaki, Tokyo (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Appl. No. 17/276,963
Filed by SONY CORPORATION, Tokyo (JP)
PCT Filed Sep. 6, 2019, PCT No. PCT/JP2019/035183
§ 371(c)(1), (2) Date Mar. 17, 2021,
PCT Pub. No. WO2020/066553, PCT Pub. Date Apr. 2, 2020.
Claims priority of application No. 2018-183617 (JP), filed on Sep. 28, 2018.
Prior Publication US 2022/0037602 A1, Feb. 3, 2022
Int. Cl. H10K 30/10 (2023.01); H10K 39/32 (2023.01); H10K 85/20 (2023.01)
CPC H10K 30/10 (2023.02) [H10K 39/32 (2023.02); H10K 85/211 (2023.02)] 14 Claims
OG exemplary drawing
 
1. An image pickup element, comprising:
a first electrode;
a charge accumulation electrode arranged apart from the first electrode;
a photoelectric conversion unit that contacts the first electrode and is formed above the charge accumulation electrode via an insulation layer; and
a second electrode formed on the photoelectric conversion unit, wherein
the photoelectric conversion unit includes, from a second-electrode side, a photoelectric conversion layer, and an inorganic oxide semiconductor material layer including a composite oxide of an indium oxide, a gallium oxide, and a tin oxide,
the composite oxide is InaGabSncOd,
a indicates an atomic ratio of indium (In) atoms,
b indicates an atomic ratio of gallium (Ga) atoms,
c indicates an atomic ratio of tin (Sn) atoms, and
0.30≤b/(a+b+c)≤0.50 and b≥c are satisfied.