US 12,035,536 B2
Integrated assemblies and methods of forming integrated assemblies
Giorgio Servalli, Fara Gera D'Adda (IT); and Marcello Mariani, Milan (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 19, 2021, as Appl. No. 17/379,012.
Prior Publication US 2023/0014289 A1, Jan. 19, 2023
Int. Cl. H10B 51/50 (2023.01); H01L 25/065 (2023.01); H01L 29/786 (2006.01); H10B 53/30 (2023.01)
CPC H10B 51/50 (2023.02) [H01L 25/0655 (2013.01); H01L 29/78642 (2013.01); H10B 53/30 (2023.02)] 37 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first access device comprising a pillar of semiconductor material; the first pillar comprising, in ascending order, a first lower source/drain region, a first channel region and a first upper source/drain region;
a second access device comprising a second pillar of the semiconductor material proximate the first pillar; the second pillar comprising, in ascending order, a second lower source/drain region, a second channel region and a second upper source/drain region;
a conductive structure coupled with the first and second lower source/drain regions, and extending along a first direction;
a first bottom electrode coupled with the first upper source/drain region;
a second bottom electrode coupled with the second upper source/drain region, and spaced from the first bottom electrode by an intervening region;
first and second leaker-device-structures extending into the intervening region from the first and second bottom electrodes, respectively;
top-electrode-material extending into the intervening region and contacting the first and second leaker-device-structures; and
insulative-material between the top-electrode-material and the bottom electrodes.