US 12,035,519 B2
Semiconductor memory device and method for forming the same
Peng Guo, Quanzhou (CN); and Yuanbao Wang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Feb. 17, 2022, as Appl. No. 17/673,828.
Claims priority of application No. 202111392126.4 (CN), filed on Nov. 19, 2021; and application No. 202122854401.1 (CN), filed on Nov. 19, 2021.
Prior Publication US 2023/0164974 A1, May 25, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 29/06 (2006.01)
CPC H10B 12/30 (2023.02) [H01L 29/0649 (2013.01); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
a substrate;
a plurality of bit lines, disposed on the substrate and extending along a first direction;
a strip-shaped isolation structure, disposed at ends of the plurality of bit lines and extending along a second direction, wherein an upper portion of the strip-shaped isolation structure comprises a seam;
a conductive residue, disposed in the seam;
a plurality of columnar isolation structures, disposed between the bit lines and separated with each other; and
a plurality of conductive plugs, disposed between the bit lines and separated from each other, wherein the conductive residue and the conductive plugs comprise the same conductive material.