US 12,035,461 B2
Low dielectric substrate for high-speed millimeter-wave communication
Toshio Shiobara, Annaka (JP); Yusuke Taguchi, Takasaki (JP); and Ryunosuke Nomura, Takasaki (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Mar. 8, 2023, as Appl. No. 18/118,915.
Application 18/118,915 is a continuation of application No. 17/571,585, filed on Jan. 10, 2022, granted, now 11,678,432.
Claims priority of application No. 2021-013654 (JP), filed on Jan. 29, 2021.
Prior Publication US 2023/0247759 A1, Aug. 3, 2023
Int. Cl. H05K 1/02 (2006.01); H05K 1/03 (2006.01)
CPC H05K 1/024 (2013.01) [H05K 1/0248 (2013.01); H05K 1/0306 (2013.01); H05K 2201/015 (2013.01); H05K 2201/0175 (2013.01); H05K 2201/0195 (2013.01); H05K 2201/0209 (2013.01)] 20 Claims
 
1. A low dielectric substrate for high-speed millimeter-wave communication, the low dielectric substrate comprising:
a quartz glass cloth having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 3.0 to 3.8 at 10 GHz; and
a maleimide resin having a dielectric loss tangent within a range of 80% to 150% of the dielectric loss tangent of the quartz glass cloth at 10 GHz and a dielectric constant within a range of 50% to 110% of the dielectric constant of the quartz glass cloth at 10 GHz.