US 12,034,419 B2
RF amplifiers having shielded transmission line structures
Kwangmo Chris Lim, San Jose, CA (US); Basim Noori, San Jose, CA (US); Qianli Mu, San Jose, CA (US); Marvin Marbell, Morgan Hill, CA (US); Scott Sheppard, Chapel Hill, NC (US); and Alexander Komposch, Morgan Hill, CA (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on May 5, 2022, as Appl. No. 17/737,054.
Application 17/737,054 is a continuation of application No. 16/888,957, filed on Jun. 1, 2020, granted, now 11,356,070.
Prior Publication US 2022/0263482 A1, Aug. 18, 2022
Int. Cl. H03F 3/72 (2006.01); H01Q 1/52 (2006.01); H03F 1/56 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03H 2/00 (2006.01)
CPC H03F 3/72 (2013.01) [H01Q 1/526 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03H 2/008 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and gate fingers, drain fingers and source fingers extending on an upper surface of the semiconductor layer structure; and
a plurality of conductive pillars extending perpendicular to the upper surface of the semiconductor layer structure, the conductive pillars including a first conductive pillar that is electrically connected to either the gate fingers or the drain fingers and first and second conductive ground pillars that are on opposed sides of the first conductive pillar, the first and second conductive ground pillars electrically connected to the source fingers,
wherein the first conductive pillar vertically overlaps an active region of the RF transistor amplifier die.