CPC H01M 4/386 (2013.01) [C01B 33/023 (2013.01); H01M 4/134 (2013.01); C01P 2002/54 (2013.01); C01P 2002/72 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2006/16 (2013.01); C01P 2006/40 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 10/0525 (2013.01)] | 15 Claims |
1. A sulfur-doped silicon negative electrode material which has an internal pore channel having an average width of 500 nm to 3 μm and has an average external diameter of 1 μm to 5 μm,
wherein the sulfur-doped silicon negative electrode material consists of silicon and sulfur seeds and has a structure in which silicon and sulfur seeds are agglomerated with each other in a mixed state, and
wherein the sulfur-doped silicon negative electrode material has an electrical conductivity of 1 S/m to 6 S/m.
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