US 12,034,101 B2
Semiconductor wafer, semiconductor device, and gas concentration measuring device
Kengo Sasayama, Tokyo (JP)
Assigned to Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on Mar. 11, 2021, as Appl. No. 17/198,476.
Claims priority of application No. 2020-041973 (JP), filed on Mar. 11, 2020.
Prior Publication US 2021/0288225 A1, Sep. 16, 2021
Int. Cl. H01L 33/00 (2010.01); G01N 21/3504 (2014.01); H01L 33/30 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/44 (2013.01) [G01N 21/3504 (2013.01); H01L 33/30 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor wafer comprising:
a wafer substrate;
a semiconductor stacked portion formed on a first surface of the wafer substrate, the semiconductor stacked portion being capable of one of emitting and receiving infrared light of 2 μm to 10 μm; and
an optical filter formed on a second surface of the wafer substrate that is opposite to the first surface of the wafer substrate,
wherein a thickness Twaf [μm] of the wafer substrate and a thickness Topt [μm] of the optical filter satisfy relations of Topt≥4 and Topt≤0.000053×Twaf2.0488.