US 12,034,095 B2
Optical cladding layer design
Erik Johan Norberg, Santa Barbara, CA (US); Anand Ramaswamy, Pasadena, CA (US); and Brian Robert Koch, Brisbane, CA (US)
Assigned to OpenLight Photonics, Inc., Goleta, CA (US)
Filed by OpenLight Photonics, Inc., Goleta, CA (US)
Filed on Aug. 17, 2022, as Appl. No. 17/889,961.
Application 17/889,961 is a continuation of application No. 17/065,180, filed on Oct. 7, 2020, granted, now 11,430,901.
Application 17/065,180 is a continuation of application No. 16/548,260, filed on Aug. 22, 2019, granted, now 10,833,213.
Application 16/548,260 is a continuation of application No. 15/927,277, filed on Mar. 21, 2018, granted, now 10,431,703.
Application 15/927,277 is a continuation of application No. 15/361,865, filed on Nov. 28, 2016, granted, now 9,960,297.
Application 15/361,865 is a continuation of application No. 13/597,701, filed on Aug. 29, 2012, granted, now 9,509,122.
Prior Publication US 2022/0393047 A1, Dec. 8, 2022
Int. Cl. H01L 31/0304 (2006.01); H01L 31/0232 (2014.01); H01L 31/0328 (2006.01); H01L 31/109 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/026 (2006.01); H01S 5/10 (2021.01); H01S 5/32 (2006.01)
CPC H01L 31/0304 (2013.01) [H01L 31/02327 (2013.01); H01L 31/0328 (2013.01); H01L 31/109 (2013.01); H01S 5/02461 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/1032 (2013.01); Y02E 10/544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a cladding layer defining a longitudinal direction transverse to a surface of the cladding layer and a lateral direction parallel to the cladding layer;
a silicon semiconductor layer adjacent to the cladding layer;
a buried oxide layer adjacent to the silicon semiconductor layer; and
a III-V semiconductor layer on the surface of the cladding layer, the III-V semiconductor layer having a lateral width that is wider than a narrow lateral width of the cladding layer, the III-V semiconductor layer having an active region with light confined in the III-V semiconductor layer by the cladding layer, the light being confined in the longitudinal direction transverse to the surface of the cladding layer.