CPC H01L 31/02327 (2013.01) [G01S 17/08 (2013.01); G01S 17/89 (2013.01); H01L 27/1446 (2013.01); H01L 31/107 (2013.01)] | 21 Claims |
1. A light detector, comprising:
a first semiconductor layer of a first conductivity type;
a first region provided on a portion of the first semiconductor layer, the first region including
a first semiconductor region of the first conductivity type having a higher first-conductivity-type impurity concentration than the first semiconductor layer, and
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a quenching part electrically connected to the second semiconductor region;
a second region provided on another portion of the first semiconductor layer, the second region including
a third semiconductor region of the second conductivity type, and
a fourth semiconductor region provided on a portion of the third semiconductor region, the fourth semiconductor region being of the first conductivity type; and
a first layer provided on the second region, the first layer including a resin that absorbs or reflects light.
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