US 12,034,086 B1
Trench capacitors with continuous dielectric layer and methods of fabrication
Somilkumar J. Rathi, San Jose, CA (US); Noriyuki Sato, Hillsboro, OR (US); Niloy Mukherjee, San Ramon, CA (US); Rajeev Kumar Dokania, Beaverton, OR (US); Amrita Mathuriya, Portland, OR (US); Tanay Gosavi, Portland, OR (US); Pratyush Pandey, Kensington, CA (US); Jason Y. Wu, Albany, CA (US); and Sasikanth Manipatruni, Portland, OR (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Dec. 15, 2021, as Appl. No. 17/552,269.
Application 17/552,269 is a continuation of application No. 17/550,899, filed on Dec. 14, 2021.
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 53/30 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01)
CPC H01L 29/945 (2013.01) [H01L 21/76834 (2013.01); H01L 21/7687 (2013.01); H01L 21/76877 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 28/57 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01); H10B 53/30 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A device comprising:
a first region comprising:
a first conductive interconnect within a first dielectric in a first level; and
a second level above the first level, the second level comprising:
an electrode structure on the first conductive interconnect, the electrode structure comprising:
a first conductive hydrogen barrier layer; and
a first conductive fill material on the first conductive hydrogen barrier layer, wherein the electrode structure comprises a first lateral thickness;
an etch stop layer comprising an insulator, the etch stop layer laterally surrounding the electrode structure;
a second dielectric on the etch stop layer, the second dielectric comprising an amorphous, greater than 90% film density hydrogen barrier material;
a trench within the second dielectric, the trench on the electrode structure;
a non-planar capacitor within the trench, the non-planar capacitor comprising:
a first electrode along a base and a sidewall of the trench, wherein the first electrode is on the electrode structure;
a dielectric layer comprising a ferroelectric material or a paraelectric material substantially conformal to and extending over the first electrode on to an uppermost surface of the second dielectric; and
a second electrode in contact with the dielectric layer; and
a via electrode on the second electrode, the via electrode comprising:
a second conductive hydrogen barrier layer comprising a lateral portion in contact with the second electrode and substantially vertical portions connected to the lateral portion; and
a second conductive fill material adjacent to the second conductive hydrogen barrier layer; and
a second region adjacent to the first region, the second region comprising:
a second conductive interconnect within the first level;
a third dielectric on the etch stop layer, the third dielectric directly adjacent to the second dielectric, wherein the third dielectric comprises a less than 90% film density material; and
a via structure on the second conductive interconnect, the via structure laterally in contact with the third dielectric.