US 12,034,085 B2
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers
Harald Gossner, Riemerling (DE); Peter Baumgartner, Munich (DE); Uwe Hodel, Putzbrunn (DE); Domagoj Siprak, Munich (DE); Stephan Leuschner, Munich (DE); Richard Geiger, Munich (DE); Han Wui Then, Portland, OR (US); Marko Radosavljevic, Portland, OR (US); and Sansaptak Dasgupta, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 23, 2022, as Appl. No. 17/848,275.
Application 17/848,275 is a division of application No. 16/641,222, granted, now 11,380,806, previously published as PCT/US2017/054155, filed on Sep. 28, 2017.
Prior Publication US 2022/0320350 A1, Oct. 6, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/93 (2006.01)
CPC H01L 29/93 (2013.01) [H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A variable capacitance device comprising:
a first two-dimensional electron gas (2DEG) region within a first material layer comprising Ga and N;
a first polarization material layer over the first material layer;
a first source and a first drain coupled to the first material layer, wherein the first source and the first drain comprise a Group III element, N, and a donor impurity;
a second 2DEG region within a second material layer comprising Ga and N, wherein the second material layer is over the first material layer and wherein a thickness of the first material layer is greater than a thickness of the second material layer;
a second polarization material layer over the second material layer, wherein a thickness of the first polarization material layer is greater than a thickness of the second polarization material layer;
a second source and a second drain coupled to the second material layer, wherein the second source and the second drain comprise a Group III element, N, and a donor impurity;
and a gate electrode over the second material layer.