| CPC H01L 29/8086 (2013.01) [H01L 29/1033 (2013.01); H01L 29/66901 (2013.01)] | 17 Claims |
|
1. A semiconductor device, comprising:
an insulating film formed on a substrate;
a single poly-silicon layer comprising an undoped poly-silicon region, first and second doped poly-silicon regions and formed on the insulating film;
a highly doped first conductivity type drain and source regions formed in the first and second doped poly-silicon regions, respectively; and
a highly doped second conductivity type gate region formed in the single poly-silicon layer disposed between the highly doped first conductivity type drain and source regions,
wherein the highly doped first conductivity type drain and source regions, and the highly doped second conductivity type gate region are each formed above the insulating film, and
wherein the undoped poly-silicon region is disposed closer to the highly doped first conductivity type source region than the highly doped first conductivity type drain region.
|