US 12,034,080 B2
Semiconductor device, method for manufacturing the same, or display device including the same
Junichi Koezuka, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); Yasuharu Hosaka, Tochigi (JP); Masami Jintyou, Tochigi (JP); Takahiro Iguchi, Tochigi (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Jul. 24, 2019, as Appl. No. 16/520,831.
Application 16/520,831 is a division of application No. 15/058,832, filed on Mar. 2, 2016, granted, now 10,367,095.
Claims priority of application No. 2015-040981 (JP), filed on Mar. 3, 2015; application No. 2015-052903 (JP), filed on Mar. 17, 2015; application No. 2015-127835 (JP), filed on Jun. 25, 2015; and application No. 2015-239875 (JP), filed on Dec. 9, 2015.
Prior Publication US 2019/0348538 A1, Nov. 14, 2019
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/0262 (2013.01); H01L 21/02631 (2013.01); H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulating film;
forming a first oxide semiconductor film by a sputtering method over the first insulating film;
forming a second insulating film over the first oxide semiconductor film; and
forming a first gate electrode comprising a second oxide semiconductor film by a sputtering method over the second insulating film,
wherein, in the step of forming the first and the second oxide semiconductor film, an oxygen gas mixed with an inert gas is introduced into a deposition chamber,
wherein, in the step of forming the second oxide semiconductor film, a volume flow rate percentage of the oxygen gas to the oxygen gas and the inert gas is higher than or equal to 50% and lower than 100%, and
wherein, a volume flow rate percentage of the oxygen gas in the step of forming the first oxide semiconductor film is lower than the volume flow rate percentage of the oxygen gas in the step of forming the second oxide semiconductor film.