US 12,034,076 B2
Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
Chih-Liang Chen, Hsinchu (TW); Lei-Chun Chou, Taipei (TW); Jack Liu, Taipei (TW); Kam-Tou Sio, Hsinchu County (TW); Hui-Ting Yang, Hsinchu County (TW); Wei-Cheng Lin, Taichung (TW); Chun-Hung Liou, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); and Chew-Yuen Young, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 19, 2021, as Appl. No. 17/406,884.
Application 16/894,228 is a division of application No. 15/993,149, filed on May 30, 2018, granted, now 10,700,207, issued on Jun. 30, 2020.
Application 17/406,884 is a continuation of application No. 16/894,228, filed on Jun. 5, 2020, granted, now 11,121,256.
Claims priority of provisional application 62/592,744, filed on Nov. 30, 2017.
Claims priority of provisional application 62/592,922, filed on Nov. 30, 2017.
Prior Publication US 2021/0384351 A1, Dec. 9, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 21/76871 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a dielectric region situated on the substrate;
a first fin structure protruding from the substrate and the dielectric region;
a second fin structure protruding from the substrate and the dielectric region, the second fin structure extending parallel to the first fin structure;
a plurality of conductive regions situated on the dielectric region;
a first conductive rail situated within the dielectric region, the first conductive rail being electrically connected to a first conductive region of the plurality of conductive regions, wherein a first side of the first conductive rail faces the first fin structure, and a second side of the first conductive rail opposite to the first side faces the second fin structure; the first conductive region is formed on the first fin structure, and extends beyond the second side of the first conductive rail; and
a conductive structure penetrating through the substrate and formed under the first conductive rail, the conductive structure being electrically connected to the first conductive rail.