US 12,034,069 B2
Method of manufacturing semiconductor device and semiconductor device
Shigeki Yoshida, Osaka (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Filed on Dec. 8, 2022, as Appl. No. 18/063,361.
Application 18/063,361 is a division of application No. 16/953,920, filed on Nov. 20, 2020, abandoned.
Claims priority of application No. 2019-212427 (JP), filed on Nov. 25, 2019.
Prior Publication US 2023/0105888 A1, Apr. 6, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7783 (2013.01) [H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
an AlGaN layer or an InAlN layer provided on the substrate, the AlGaN layer or the InAlN layer being n-type doped or undoped;
an AlN layer formed on an upper surface of the AlGaN layer or an upper surface of the InAlN layer;
a GaN layer formed on an upper surface of the AlN layer, the GaN layer including a two-dimensional electron gas;
a pair of GaN regions provided on the AlN layer, the GaN regions sandwiching a portion of the GaN layer and being formed on the upper surface of the AlN layer, the pair of GaN regions being n-type doped;
a pair of ohmic electrodes provided on the pair of GaN regions, each ohmic electrode making ohmic contact with one of the GaN regions; and
a gate electrode formed between the pair of ohmic electrodes on an upper surface of the GaN layer,
wherein each GaN region has a thickness greater than a thickness of the GaN layer, and each GaN region protrudes from the upper surface of the GaN layer.