US 12,034,066 B2
Power semiconductor device having a barrier region
Antonio Vellei, Villach (AT); Markus Beninger-Bina, Grosshelfendorf (DE); Matteo Dainese, Munich (DE); Christian Jaeger, Munich (DE); Johannes Georg Laven, Taufkirchen (DE); Alexander Philippou, Munich (DE); and Francisco Javier Santos Rodriguez, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 21, 2023, as Appl. No. 18/112,249.
Application 16/837,337 is a division of application No. 16/167,926, filed on Oct. 23, 2018, granted, now 10,615,272, issued on Apr. 7, 2020.
Application 18/112,249 is a continuation of application No. 17/087,678, filed on Nov. 3, 2020, granted, now 11,594,621.
Application 17/087,678 is a continuation of application No. 16/837,337, filed on Apr. 1, 2020, granted, now 10,854,739, issued on Dec. 1, 2020.
Claims priority of application No. 102017124872.2 (DE), filed on Oct. 24, 2017.
Prior Publication US 2023/0207673 A1, Jun. 29, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/033 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 21/0337 (2013.01); H01L 21/2253 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H01L 29/4238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power semiconductor device, comprising:
a first load terminal and a second load terminal, wherein the power semiconductor device is configured to conduct a load current along a vertical direction between the first and second load terminals;
a drift region of a first conductivity type;
a first pair of trenches that extend into the drift region along the vertical direction and that laterally confine an active mesa;
a channel region of a second conductivity type in the active mesa;
a first barrier region of the second conductivity type that extends in the vertical direction from the drift region into the active mesa; and
a second barrier region of the first conductivity type in the active mesa and interposed between the channel region and the first barrier region.