US 12,034,049 B2
Superlattice structure including two-dimensional material and device including the superlattice structure
Minhyun Lee, Suwon-si (KR); Jiwoong Park, Chicago, IL (US); Saien Xie, Ithaca, NY (US); Jinseong Heo, Seoul (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); The University of Chicago, Chicago, IL (US); and Center for Technology Licensing at Cornell University, Ithaca, NY (US)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); THE UNIVERSITY OF CHICAGO, Chicago, IL (US); and Center for Technology Licensing at Cornell University, Ithaca, NY (US)
Filed on Nov. 2, 2022, as Appl. No. 18/052,017.
Application 18/052,017 is a continuation of application No. 17/515,713, filed on Nov. 1, 2021, granted, now 11,575,011.
Application 17/515,713 is a continuation of application No. 16/428,006, filed on May 31, 2019, granted, now 11,189,699, issued on Nov. 30, 2021.
Claims priority of provisional application 62/679,085, filed on Jun. 1, 2018.
Prior Publication US 2023/0395665 A1, Dec. 7, 2023
Int. Cl. H01L 29/15 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/158 (2013.01) [H01L 29/1054 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor comprising:
a source electrode;
a drain electrode;
a gate electrode arranged between the source electrode and the drain electrode;
a two-dimensional (2D) material layer including a first region connected to the source electrode and the drain electrode and a second region laterally bonded to the first region at an interfacial region, the first region being electrically connected to the source electrode and the drain electrode;
wherein the first region has a first bandgap, the second region has a second bandgap greater than the first bandgap and the interfacial region has a bandgap between the first bandgap and the second bandgap.