US 12,034,036 B2
Semiconductor device and semiconductor apparatus including the same
Jeonggyu Song, Seongnam-si (KR); Younsoo Kim, Yongin-si (KR); Haeryong Kim, Seongnam-si (KR); Boeun Park, Hwaseong-si (KR); Eunha Lee, Seoul (KR); Jooho Lee, Hwaseong-si (KR); Hyangsook Lee, Suwon-si (KR); Yong-Hee Cho, Suwon-si (KR); and Eunae Cho, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon (KR)
Filed on May 28, 2021, as Appl. No. 17/334,030.
Claims priority of application No. 10-2020-0145525 (KR), filed on Nov. 3, 2020; and application No. 10-2021-0001061 (KR), filed on Jan. 5, 2021.
Prior Publication US 2022/0140067 A1, May 5, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/65 (2013.01) [H01L 28/56 (2013.01); H01L 29/0847 (2013.01)] 26 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a lower electrode;
an upper electrode spaced apart from the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising
a first metal oxide region comprising a first metal oxide of one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu,
a second metal oxide region comprising a second metal oxide, the second metal oxide comprising one or more of Y, Sc, or Ce and further comprising one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu, and
a third metal oxide region comprising a third metal oxide of one or more of Al, Mg, or Be,
wherein a thickness of the second metal oxide is less than a thickness of the first metal oxide.