US 12,034,035 B2
Capacitor comprising anti-ferroelectric layers and high-k dielectric layers
Se Hun Kang, Gyeonggi-do (KR)
Assigned to SK HYNIX INC., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 12, 2020, as Appl. No. 17/095,889.
Claims priority of application No. 10-2020-0059056 (KR), filed on May 18, 2020.
Prior Publication US 2021/0359082 A1, Nov. 18, 2021
Int. Cl. H10B 53/30 (2023.01); H01L 29/51 (2006.01); H01L 49/02 (2006.01); H10B 51/20 (2023.01)
CPC H01L 28/56 (2013.01) [H01L 29/513 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H10B 53/30 (2023.02); H10B 51/20 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a capacitor, wherein the capacitor includes:
a first electrode;
a second electrode; and
a high band gap layer disposed between the first electrode and the second electrode;
a first high-k dielectric layer disposed between the first electrode and the high band gap layer;
a first anti-ferroelectric layer disposed between the high band gap layer over the first high-k dielectric layer;
a second high-k dielectric layer disposed between the second electrode and the high band gap layer; and
a second anti-ferroelectric layer disposed between the high band gap layer and the second high-k dielectric layer,
wherein the first and second anti-ferroelectric layers have a tetragonal crystal structure,
wherein the first and second anti-ferroelectric layers include a hafnium oxide-rich hafnium zirconium oxide whose hafnium oxide content is greater than a zirconium oxide content,
wherein the high band gap layer is formed of a single layer of an aluminum-containing material and is directly contacted with the first and second anti-ferroelectric layers, and
wherein the first and second high-k dielectric layers include zirconium oxide.