US 12,034,029 B2
Imaging device and method for producing imaging device
Atsushi Yoshida, Kumamoto (JP); Yuuji Kishigami, Kumamoto (JP); and Hidetsugu Otani, Kumamoto (JP)
Assigned to SONY SEMICONDUCTORSOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/250,246
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Mar. 19, 2019, PCT No. PCT/JP2019/011362
§ 371(c)(1), (2) Date Dec. 21, 2020,
PCT Pub. No. WO2020/003647, PCT Pub. Date Jan. 2, 2020.
Claims priority of application No. 2018-124465 (JP), filed on Jun. 29, 2018.
Prior Publication US 2021/0273004 A1, Sep. 2, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14618 (2013.01); H01L 27/14683 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
an imaging element;
a substrate to which the imaging element is bonded, wherein:
the substrate is formed of an organic substrate and an inorganic substrate,
the organic substrate includes:
an insulation layer that is made of an organic material, and
a wiring layer made up of a material that has a low electric resistance,
the inorganic substrate includes:
an insulation layer that is made of an inorganic material, and
a plurality of wiring layers of a material having a melting point higher than a firing temperature of the inorganic material,
a thickness of each wiring layer of the plurality of wiring layers of the inorganic substrate is greater than a thickness of the wiring layer of the organic substrate, and
a thermal expansion coefficient of the inorganic substrate is lower than a thermal expansion coefficient of the organic substrate; and
a connection portion that connects the substrate and the imaging element.