US 12,034,025 B2
Semiconductor devices with single-photon avalanche diodes and isolation structures
Jeffrey Peter Gambino, Gresham, OR (US); David T. Price, Gresham, OR (US); Marc Allen Sulfridge, Boise, ID (US); Richard Mauritzson, Meridian, ID (US); Michael Gerard Keyes, Dromcollogher (IE); Ryan Rettmann, Hopewell Junction, NY (US); and Kevin Mcstay, Hopewell Junction, NY (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on May 13, 2021, as Appl. No. 17/302,836.
Prior Publication US 2022/0367534 A1, Nov. 17, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14623 (2013.01); H01L 27/1464 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate; and
a front side deep trench isolation structure in the substrate that is interposed between the single-photon avalanche diode and an adjacent single-photon avalanche diode, wherein the front side deep trench isolation structure comprises a metal filler in a trench, wherein the trench has a p-type doped semiconductor liner, wherein the p-type doped semiconductor liner has a first doping concentration in a first portion of the front side deep trench isolation structure and a second doping concentration that is different than the first doping concentration in a second portion of the front side deep trench isolation structure.